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Philips Semiconductors                                                                                 Objective specification

PowerMOS transistor                                                                                         PHX4N50E
Isolated version of PHP4N50E

GENERAL DESCRIPTION                       QUICK REFERENCE DATA
N-channel enhancement mode                 SYMBOL            PARAMETER                                     MAX.      UNIT
field-effect power transistor in a full
pack, plastic envelope featuring high      VDS               Drain-source voltage                           500        V
avalanche energy capability, stable        ID                Drain current (DC)                             2.9        A
blocking voltage, fast switching and       Ptot              Total power dissipation                         30        W
high thermal cycling performance           RDS(ON)           Drain-source on-state resistance               1.5        
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - SOT186A                         PIN CONFIGURATION                          SYMBOL
  PIN            DESCRIPTION                                                                                d
                                                        case

    1    gate

    2    drain
                                                                                                 g
    3    source
  case isolated
                                                               1 2 3                                        s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL PARAMETER                              CONDITIONS                                       MIN.       MAX.      UNIT
 VDS         Drain-source voltage                                                                -          500        V
 VDGR        Drain-gate voltage                RGS = 20 k                                        -          500        V
 

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