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N-channel TrenchMOS logic level FET
Rev. 01 -- 13 April 2007 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Logic level threshold I Fast switching
1.3 Applications
I Battery management I High-speed switching
1.4 Quick reference data
I VDS 30 V I ID 4.6 A
I RDSon 47 m I QGD = 1.6 nC (typ)
2. Pinning information
Table 1. Pinning
Pin Description Simplified outline Symbol
1, 2, 5, 6 drain (D)
6 5 4 D
3 gate (G)
4 source (S)
G
1 2 3
mbb076 S
SOT457 (TSOP6)
NXP Semiconductors PMN49EN
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
PMN49EN SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25
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