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40 V, 200 mA NPN/NPN general-purpose double transistor
Rev. 01 -- 12 May 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package PNP/PNP NPN/PNP Package
NXP JEITA complement complement configuration
PMBT3904YS SOT363 SC-88 PMBT3906YS PMBT3946YPN very small
1.2 Features
I General-purpose double transistor
I Board-space reduction
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 40 V
IC collector current - - 200 mA
hFE DC current gain VCE = 1 V; 100 180 300
IC = 10 mA
NXP Semiconductors PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1
5 base TR2 1 2 3
1 2 3
6 collector TR1
sym020
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PMBT3904YS SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 5. Marking codes
Type number Marking code[1]
PMBT3904YS BC*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBT3904YS_1
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