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PNP switching transistor
Rev. 06 -- 2 March 2010 Product data sheet
1. Product profile
1.1 General description
PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMBT3904.
1.2 Features and benefits
Collector-emitter voltage VCEO = -40 V
Collector current capability IC = -200 mA
1.3 Applications
General amplification and switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -40 V
IC collector current - - -200 mA
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
1 2
2
006aab259
NXP Semiconductors PMBT3906
PNP switching transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMBT3906 - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PMBT3906 *2A
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base - -40 V
VEBO emitter-base voltage open collector - -6 V
IC collector current - -200 mA
ICM peak collector current - -200 mA
IBM peak base current - -100 mA
Ptot total power dissipation Tamb 25
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