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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
Product specification April 1995
NXP Semiconductors Product specification
PMBF4391;
N-channel FETs
PMBF4392; PMBF4393
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for low-power handbook, halfpage 3
chopper or switching applications in
industry. d
g
s
PINNING 1 2
1 = drain Top view MAM385
2 = source
3 = gate
Note
1. Drain and source are Fig.1 Simplified outline and symbol, SOT23.
interchangeable.
Marking code
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
QUICK REFERENCE DATA
PMBF4391 PMBF4392 PMBF4393
Drain-source voltage VDS max. 40 40 40 V
Drain current
VDS = 20 V; VGS = 0 IDSS 50 25 5 mA
Gate-source cut-off voltage
4 2 0.5 V
VDS = 20 V; ID = 1 nA V(P)GS
10 5 3 V
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0 Rds on 30 60 100
Feedback capacitance at f = 1 MHz
VGS = 12 V; VDS = 0 Crs 3.5 3.5 3.5 pF
Turn-off time
VDD = 10 V; VGS = 0
ID = 12 mA; VGSM = 12 V toff 20 ns
ID = 6 mA; VGSM = 7 V toff 35 ns
ID = 3 mA; VGSM = 5 V toff 50 ns
April 1995 2
NXP Semiconductors Product specification
PMBF4391; PMBF4392;
N-channel FETs
PMBF4393
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage VDS max. 40 V
Drain-gate voltage VDGO max. 40 V
Gate-source voltage VGSO max. 40 V
Gate current (DC) IG max. 50 mA
Total power dissipation up to Tamb = 40 C (1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
THERMAL RESISTANCE
From junction to ambient(1) Rth j-a = 430 K/W
CHARACTERISTICS
Tj = 25 C unless otherwise specified
Gate-source voltage
IG = 1 mA; VDS = 0 VGSon 1 V
Gate-source cut-off current
VDS = 0 V; VGS = 20 V IGSS 0.1 nA
VDS = 0 V; VGS = 20 V; Tamb = 150 C IGSS 0.2 A
PMBF4391 PMBF4392 PMBF4393
Drain current IDSS 50 25 5 mA
VDS = 20 V; VGS = 0 150 75 30 mA
Gate-source breakdown voltage
IG = 1 A; VDS = 0 V(BR)GSS 40 40 40 V
Gate-source cut-off voltage V(P)GS 4 2 0.5 V
ID = 1 nA; VDS = 20 V 10 5 3 V
Drain-source voltage (on)
ID = 12 mA; VGS = 0 VDSon 0.4 V
ID = 6 mA; VGS = 0 VDSon 0.4 V
ID = 3 mA; VGS = 0 VDSon 0.4 V
Drain-source resistance (on)
ID = 0; VGS = 0; f = 1 kHz; Tamb = 25 C rds on 30 100
Drain cut-off current
VGS = 12 V VDS = 20 V IDSX 0.1 nA
VGS = 7 V IDSX 0.1 nA
VGS = 5 V IDSX 0.1 nA
VGS = 12 V VDS = 20 V; Tamb = 150 C IDSX 0.2 A
VGS = 7 V IDSX 0.2 A
VGS = 5 V IDSX 0.2 A
April 1995 3
NXP Semiconductors Product specification
PMBF4391; PMBF4392;
N-channel FETs
PMBF4393
y-parameters (common source)
VDS = 20 V; VGS = 0; f = 1 MHz; Tamb = 25 C PMBF4391 PMBF4392 PMBF4393
Input capacitance Cis 14 14 14 pF
Feedback capacitance
VGS = 12 V ; VDS = 0 Crs 3.5 pF
VGS = 7 V ; VDS = 0 Crs 3.5 pF
VGS = 5 V ; VDS = 0 Crs 3.5 pF
Switching times
VDD = 10 V ; VDS = 0
Conditions ID and VGSoff ID = 12 6 3 mA
VGS off = 12 7 5 V
RL = 750 1550 3150
Rise time tr 5 5 5 ns
Turn on time ton 15 15 15 ns
Fall time tf 15 20 30 ns
Turn off time toff 20 35 50 ns
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
handbook, full pagewidth VGS = 0 V
10%
Vi
90%
-VGS off
toff ton
tf tr
90%
Vo
10%
MBK288
Fig.2 Switching times waveforms.
April 1995 4
NXP Semiconductors Product specification
PMBF4391; PMBF4392;
N-channel FETs
PMBF4393
Pulse generator:
tr 0.5 ns
tf 0.5 ns
tp = 100 s
= 0.01
Oscilloscope:
1 F
handbook, halfpage
VDD
50 Ri = 50
10 nF 10 F
RL
SAMPLING
DUT SCOPE
50
50
MBK289
Fig.3 Test circuit.
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
0 40 80 120 160 200
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