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                         PSMN3R0-30YL
           K
        PA
      LF                 N-channel 30 V 3 m logic level MOSFET in LFPAK
                         Rev. 04 -- 10 March 2011                                                          Product data sheet




1. Product profile

               1.1 General description
                   Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
                   package using TrenchMOS technology. This product is designed and qualified for use in
                   industrial and communications applications.

               1.2 Features and benefits
                          High efficiency due to low switching                     Suitable for logic level gate drive
                          and conduction losses                                    sources

               1.3 Applications
                          Class-D amplifiers                                       Motor control
                          DC-to-DC converters                                      Server power supplies

               1.4 Quick reference data
                   Table 1.       Quick reference data
                   Symbol           Parameter                    Conditions                            Min    Typ   Max Unit
                   VDS              drain-source voltage         Tj  25 

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