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N-channel enhancement mode field-effect transistor
Rev. 01 -- 29 April 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOSTM technology.
Product availability:
PSMN009-100P in SOT78 (TO-220AB)
PSMN009-100B in SOT404 (D2-PAK).
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
s OR-ing applications.
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb
2 drain (d) [1]
d
3 source (s)
mb drain (d)
g
2 MBB076 s
1 3 MBK116
MBK106
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) 25
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