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                         PSMN057-200P
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                         N-channel TrenchMOS SiliconMAX standard level FET
                         Rev. 02 -- 4 January 2011                                              Product data sheet




1. Product profile

                1.1 General description
                    SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
                    a plastic package using TrenchMOS technology. This product is designed and qualified for
                    use in computing, communications, consumer and industrial applications only.

                1.2 Features and benefits
                           Higher operating power due to low                 Suitable for high frequency
                           thermal resistance                                applications due to fast switching
                           Low conduction losses due to low                  characteristics
                           on-state resistance

                1.3 Applications
                           DC-to-DC converters                               Switched-mode power supplies

                1.4 Quick reference data
                    Table 1.     Quick reference data
                    Symbol        Parameter                    Conditions                   Min    Typ   Max Unit
                    VDS           drain-source voltage         Tj  25 

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