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                         PSMN2R5-30YL
           K
        PA
      LF                 N-channel 30 V 2.4 m logic level MOSFET in LFPAK
                         Rev. 04 -- 10 March 2011                                                         Product data sheet




1. Product profile

               1.1 General description
                   Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
                   package using TrenchMOS technology. This product is designed and qualified for use in
                   industrial and communications applications.

               1.2 Features and benefits
                     High efficiency due to low switching                        Suitable for logic level gate drive
                     and conduction losses                                       sources

               1.3 Applications
                     Class-D amplifiers                                          Motor control
                     DC-to-DC converters                                         Server power supplies

               1.4 Quick reference data
                   Table 1.       Quick reference data
                   Symbol           Parameter                   Conditions                            Min    Typ   Max Unit
                   VDS              drain-source voltage        Tj  25 

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