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PUML1/DG
50 V, 200 mA NPN general-purpose transistor/
100 mA NPN resistor-equipped transistor
Rev. 01 -- 14 July 2008 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one
SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I General-purpose transistor:
N 200 mA collector current IC
I Resistor-equipped transistor:
N Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
I Very small SMD plastic package
I AEC-Q101 qualified
1.3 Applications
I Inverter and switches
I Low-frequency amplifier
I Driver stages
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1 (general-purpose transistor)
VCEO collector-emitter voltage open base - - 50 V
IC collector current - - 200 mA
hFE DC current gain VCE = 10 V; 210 - 340
IC = 2 mA
TR2 (resistor-equipped transistor)
VCEO collector-emitter voltage open base - - 50 V
IO output current - - 100 mA
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PUML1/DG
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 output (collector) TR2 R1 R2
4 GND (emitter) TR2 TR2
5 input (base) TR2 1 2 3
TR1
6 collector TR1
1 2 3
006aab253
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PUML1/DG SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PUML1/DG PA*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1 (general-purpose transistor)
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 6 V
IC collector current - 200 mA
ICM peak collector current single pulse; - 200 mA
tp 1 ms
IBM peak base current single pulse; - 100 mA
tp 1 ms
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