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                                     SI2302DS
                                     N-channel enhancement mode field-effect transistor
                      M3D088
                                     Rev. 02 -- 20 November 2001                                               Product data



1. Description
                                 N-channel enhancement mode field-effect transistor in a plastic package using
                                 TrenchMOSTM1 technology.

                                 Product availability:
                                     SI2302DS in SOT23.


2. Features
                                 s    TrenchMOSTM technology
                                 s    Very fast switching
                                 s    Logic level compatible
                                 s    Subminiature surface mount package.


3. Applications
                                 s Battery management
                                 s High speed switch
                                 s Low power DC to DC converter.


4. Pinning information
Table 1:    Pinning - SOT23, simplified outline and symbol
 Pin              Description                              Simplified outline            Symbol
 1                gate (g)
                                                                            3
                                                                                                           d
 2                source (s)
 3                drain (d)
                                                                                                     g
                                                                 1                  2
                                                                                                  MBB076   s
                                                                Top view        MSB003

                                                                        SOT23




1.   TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors                                                                                                SI2302DS
                                                                   N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                     Conditions                                                 Typ                Max                Unit
VDS              drain-source voltage (DC)           Tj = 25 to 150 

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