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si2304ds


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                                      SI2304DS
                                      N-channel enhancement mode field-effect transistor
                       M3D088
                                      Rev. 01 -- 17 August 2001                                                 Product data



1. Description
                                  N-channel enhancement mode field-effect transistor in a plastic package using
                                  TrenchMOSTM1 technology

                                  Product availability:

                                     SI2304DS in SOT23.


2. Features
                                  s TrenchMOSTM technology
                                  s Very fast switching
                                  s Subminiature surface mount package.


3. Applications
                                  s Battery management
                                  s High speed switch
                                  s Low power DC to DC converter.


4. Pinning information
Table 1:      Pinning - SOT23, simplified outline and symbol
Pin               Description                               Simplified outline            Symbol
1                 gate (g)
                                                                             3
2                 source (s)                                                                                d

3                 drain (d)

                                                                                                      g
                                                                  1                  2
                                                                                                   MBB076   s
                                                                 Top view        MSB003

                                                                         SOT23




1.    TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors                                                                                                 SI2304DS
                                                                   N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:          Quick reference data
Symbol Parameter                                     Conditions                                  Min               Typ            Max               Unit
VDS              drain-source voltage (DC)           Tj = 25 to 150 



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