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2n60p_2n60f_2n60i_2n60d


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                                                                                         2N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free                                                                     DRAIN CURRENT
                                                                                        2 AMPERES

Description:                                                                       DRAIN SOURCE VOLTAGE
                                                                                        600 VOLTAGE
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts                              D-PAK3/(TO-251)
based on half bridge topology.
                                                                2 DRAIN

Features:                                                                              D-PAK/(TO-252)
*   2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
*   Low gate charge
                                           1 GATE
*   Low Crss
*   Fast switching
*   Improved dv/dt capability                                   3
                                                            SOURCE                   TO-220       TO-220F

Maximum Ratings(T                A   =25 C Unless Otherwise Specified)
                               Rating                                    Symbol         Value         Unit
Drain-Source Voltage                                                      VDSS           600
                                                                                                        V
Gate-Source Voltage                                                       VGSS            30
Avalanche Current - (Note 1)                                               I AR          2.0
Continuous Drain Current                                                   ID            2.0
                                                                                                        A
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)                      IDM             8.0
Avalanche Energy, Single Pulsed (Note 2)                                  E AS           140           mJ
Avalanche Energy, Repetitive, Limited by TJMAX                            E AR            4.5          mJ
Peak Diode Recovery dv/dt (Note 3)                                       dv/dt            4.5         V/ns
Total Power Dissipation   2N60P(TC=25



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