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WT4410M
Surface Mount N-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free DRAIN CURRENT
D
1
S
8
10 AMPERS
D
7
2
S
D
S
6
3
DRAIN SOUCE VOLTAGE
Features:
D
G
4
5
30 VOLTAGE
*Super high dense cell design for low RDS(ON)
R DS(ON) <11 m @VGS =10V
R DS(ON) <15 m @VGS =4.5V
*Rugged and Reliable
*SO-8 Package
1
SO-8
Maximum Ratings ( TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unite
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS +
-20 V
Continuous Drain Current ( TJ =125 C) (1) ID 10 A
Pulsed Drain Current (2) IDM 30 A
Drain-Source Diode Forward Current (1) IS 2.3 A
Power Dissipation (1) PD 2.5 W
Maximax Junction-to-Ambient R JA 50 C/W
Operating Junction and Storage
TJ, Tstg -55 to 150 C
Temperature Range
Device Marking
W T4410M=SDM4410
WEITRON 1/6 01-Jul-05
http://www.weitron.com.tw
WT4410M
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Static (2)
Drain-Source Breakdown Voltage V(BR)DSS
VGS=0V, ID=250 uA 30 - - V
Gate-Source Threshold Voltage VGS (th) 3
VDS=VGS, ID=250 uA 1 1.5 V
Gate-Source Leakage Current IGSS +
+ - - -100 nA
VDS=0V, VGS=-16V
Zero Gate Voltage Drain Current IDSS - - 1 uA
VDS=24V, VGS=0V
Drain-Source On-Resistance rDS (on) m
VGS=10V, ID=10A - 11 13.5
VGS=4.5V, ID=5A - 15 20
On-State Drain Current ID(on)
VDS=10V, VGS=10A 40 - - A
Forward Transconductance gfs
VDS=10V, ID=20A - 18 - S
Dynamic (3)
Input Capacitance Ciss - 1375 -
VDS=15V, VGS=0V, f=1MHZ
Output Capacitance -
VDS=15V, VGS=0V, f=1MHZ
Coss 670 - PF
Reverse Transfer Capacitance
Crss - 200 -
VDS=15V, VGS=0V, f=1MHZ
Switching (3)
Turn-On Delay Time
td(on) - 30 - nS
VGS =10V,VDD =15V, I D =-1A, R GEN=6
Rise Time
tr - 32 - nS
VGS =10V,VDD =15V, I D =-1A, R GEN=6
Turn-Off Time
td(off ) - 132 - nS
VGS =10V,VDD =15V, I D =-1A, R GEN=6
Fall Time - nS
tf - 30
VGS =10V,VDD =15V, I D =-1A, R GEN=6
Total Gate Charge Qg nc
VDS=10V, ID=10A, VGS =10V - 40 50
VDS=10V, ID=10A, V GS =4.5V - 20 24
Gate-Source Charge Qgs -
- 8.2 nc
VDS=10V, ID=10A, V GS =10V
Gate-Drain Charge
Qgd - 5.3 - nc
VDS=10V, ID=10A, V GS =10V
Drain-Source Diode Forward Voltage
VSD - 0.76 1.1 V
VGS=0V, IS=2.3A
Note: 1. Surface Mounted on FR4 Board t < 10sec.
_
2. Pulse Test : PW < 300us, Duty Cycle < 2%.
_ _
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON 2/6 01-Jul-05
http://www.weitron.com.tw
WT4410M WE IT R ON
25 25
VGS =10,9,8,7,6,5,4V
20 20
ID , DRAIN CURRENT(A)
ID ,DRAIN CURRENT(A)
25 C
15 15
10 10 Tj =125 C
5 5
VGS =3V -55 C
0 0
0 0.5 1 1.5 2 2.5 3 0.0 1.0 2.0 3.0 4.0 5.0 6.0
VDS , DRAIN-TO-SOURCE VOLTAGE(V) VGS , GATE-TO-SOURCE VOLTAGE(V)
FIG.1. Output Characteristics FIG.2 Transfer Characteristics
0.030
1500 VGS =10V
0.025
R DS(ON) , ON-RESISTANCE()
C ,CAPACITANCE( P F)
1200
0.020
Tj =125 C
900
0.015
25 C
600 Ciss 0.010
-55 C
300 Coss 0.005
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20
VDS , DRAIN-TO-SOURCE VOLTAGE(V) ID , DRAIN CURRENT(A)
FIG.4 On-Resistance Variation with
FIG.3 Capacitance
Drain Current and Temperature
DRAIN-SOURCE BREAKDOWN VOLTAGE(V)
GATE-SOURCE THRESHOLD VOLTAGE(V)
1.09
1.15
1.06 VDS =VGS ID =-250uA
ID =250uA 1.10
1.03
Vth ,NORMALIZED
1.05
BVDSS ,NORMALIZED
1.00
1.00
0.97
0.95
0.94
0.90
0.91 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C)
FIG.5 Gate Threshold Variation FIG.6 Breakdown Voltage Variation
with Temperature with Temperature
WEITRON 3/6 01-Jul-05
http://www.weitron.com.tw
WT4410M WE IT R ON
25 40.0
IS ,SOURCE-DRAIN CURRENT(A)
gFS ,TRANSCONDUCTANCE(S)
20
15 10.0
10
5
VDS =15V
0 1
0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 1.4
IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V)
FIG.7 Transconductance Variation FIG.8 Body Diode Forward Voltage
with Drain Current Variation with Source Current
40 it
10 im
VGS ,GATE TO SOURCE VOLTAGE(V)
L
N)
VDS =10V (O
ID , DRAIN CURRENT(A)
ID =40A 10 RDS
8
10m
s
100
ms
6
1
1 1s
4 DC
2 0.1 VDS=10V
Single Pulse
0.03 TC =25 C
0
0 5 10 15 20 25 30 35 40 0.1 1 10 30 50
Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V)
FIG.10 Maximum Safe Operating Area
FIG.9 Gate Charge
V DD
ton toff
RL td(on) tr td(off) tf
V IN 90% 90%
D V OUT
V OUT 10% INVE R TE D 10%
VG S
R GE N G
90%
50% 50%
V IN
S 10%
PULS E WIDTH
FIG.11 Switching Test Circuit FIG.12 Switching Waveforms
WEITRON 4/6 01-Jul-05
http://www.weitron.com.tw
WT4410M WE IT R ON
10
r(t) ,NORMALIZED TRANSIENT
THERMAL RESISTANCE
Duty Cycle=0.5
1
0.2
0.1 P DM
0.05 t1
0.1 t2
0.02 1. R jA (t)=r (t) * R j A
2. R jA=See Datasheet
3. TjM-TA = PDM* R jA(t)
Single Pulse 4. Duty Cycle, D=t1/t 2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
WEITRON 5/6 01-Jul-05
http://www.weitron.com.tw
WT4410M
SO-8 Package Outline Dimensions Unit:mm
1
L
E1
D
7(4X)
7 (4X)
C
A
e B
2A
A1
eB
MILLIMETERS
SYMBOLS
MIN MAX
A 1.35 1.75
A1 0.10 0.20
B 0.35 0.45
C 0.18 0.23
D 4.69 4.98
E1 3.56 4.06
eB 5.70 6.30
e 1.27 BSC
L 0.60 0.80
0 8
WEITRON 6/6 01-Jul-05
http://www.weitron.com.tw
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