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WTA8921
PNP Silicon Transistors COLLECTOR
* "G" Lead(Pb)-Free
3
1
BASE
2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -30 Vdc
Collector-Base Voltage VCBO -35 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current -Continuous IC -800 mAdc
THERMAL CHARACTERISTICS
Characteristics Symbol Value Unit
Total Device Dissipation FR-5 Board (1) PD 200 mW
TA =25 C
Derate above 25 C 1.6 mW/ C
Thermal Resistance, Junction Ambient R JA 625 C/W
Junction and Storage, Temperature TJ, Tstg -55 to +150 C
Device Marking
WTA8921=IO, IY
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) V(BR)CEO -30 - Vdc
Collector-Base Breakdown Voltage (IC= -1 uAdc, IE=0) V(BR)CBO -35 - Vdc
Emitter-Base Breakdown Voltage (IE= -1 uAdc, IC=0) V(BR)EBO -5.0 - Vdc
Collector Cutoff Current (VCB= -30Vdc, IE=0) ICBO - -1.0 uAdc
Emitter Cutoff Current (VEB= -5.0 Vdc, I C=0) IEBO - -1.0 uAdc
1. FR-5=1.0 I I 0.75 I I 0.062 in
WEITRON
http://www.weitron.com.tw
WTA8921
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC= -100 mAdc, VCE= -1 Vdc) hFE (1) 100 - 320 -
(IC= -800 mAdc, VCE= -1 Vdc) hFE (2) 40 - - -
Collector-Emitter Saturation Voltage
VCE(sat) - - -0.4 Vdc
(IC= -500 mAdc, I B = -20mAdc)
Output Capacitance
Cob - 2.0 - PF
(VCB =-10Vdc, I E =0, f=1MHZ)
Transition Frequency
(IC= -10mAdc, VCE=-5 Vdc, f=30MHz) fT 80 - - MHz
CLASSIFICATION OF hFE (1)
Rank O Y
Range 100-200 160-320
WEITRON
http://www.weitron.com.tw
WTA8921
FIG.1 FIG.2
FIG.3 FIG.4
FIG.5
WEITRON
http://www.weitron.com.tw
WTA8921
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.10
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON
http://www.weitron.com.tw
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