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                                                                               BC807-16/ BC807-25
                                                                               BC807-40

General Purpose Transistor                                        COLLECTOR
                                                                      3               MARKING DIAGRAM

PNP Silicon                                                  1
                                                                                                       3

                                                           BASE
                                                                                          1
                                                                                               2
                                                                      2                       SOT-23
                                                                   EMITTER


Maximum Ratings ( TA=25 C unless otherwise noted)
                   Rating                        Symbol                       Value                        Unit
 Collector-Emitter Voltage                        V CEO                       -45                           V
 Collector-Base Voltage                           VCBO                         -50                          V
 Emitter-Base VOltage                             VEBO                        -5.0                          V
 Collector Current-Continuous                      IC                          500                     mAdc



Thermal Characteristics
               Characteristics                   Symbol                  Max                      Unit
 Total Device Dissipation FR-5 Board (1)           PD
  (Note 1.)TA=25 C                                                       225                      mW
   Derate above 25 C                                                     1.8                     mW/ C
 Thermal Resistance, Junction to Ambient          R qJA                  556                      C/W
 Total Device Dissipation Alumina
  Substrate, (Note 2.) TA=25 C                     PD                    300                      mW
  Derate above 25 C                                                      2.4                     mW/ C
 Thermal Resistance, Junction to Ambient          R qJA                  417                      C/W
 Junction and Storage, Temperature               TJ,Tstg             -55 to +150                       C


Device Marking
 BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1

1.F R -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.




     WEITRON                                                                                  Rev.A 16-Dec-08
http://www.weitron.com.tw
     BC807-16/BC807-25
     BC807-40                                                                                  WE IT R ON
Electrical Characteristics              (TA=25 C Unless Otherwise noted)
                              Characteristics                      Symbol     Min      Typ       Max           Unit


Off Characteristics
  Collector-Emitter Breakdown Voltage                             V(BR)CEO    -45          -              -     V
  (IC= -10mA)
  Collector-Emitter Breakdown Voltage                                                                           V
  (IC=-10 

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