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MPSA05
MPSA06
Driver NPN Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol MPSA05 MPSA06 Unit
Collector-Emitter Voltage VCEO 60 80 Vdc
Collector-Base Voltage VCBO 60 80 Vdc
Emitter-Base VOltage VEBO 4.0 Vdc
Collector Current IC 500 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
- Vdc
MPSA05 V(BR)CEO 60
MPSA06 80
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
MPSA05 V(BR)CBO 60 - Vdc
MPSA06 80
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 4.0 - Vdc
Collector Cutoff Current
(VCE= 50 Vdc, IB =0) MPSA05 ICE0 - 0.1 uAdc
(VCE= 60 Vdc, IB =0) MPSA06
Collector Cutoff Current
(VCE= 60 Vdc, IB =0) MPSA05 ICBO - 0.1 uAdc
(VCE= 80 Vdc, IB =0) MPSA06
Emitter Cutoff Current (VEB= 3.0Vd c, IC =0) IEBO - 0.1 uAdc
WEITRON
http://www.weitron.com.tw
MPSA05
MPSA06
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain hFE (1) 100 - - -
(IC= 100 mAdc, VCE=1.0 Vdc)
Collector-Emitter Saturation Voltage -
VCE(sat) - 0.25 Vdc
(IC= 100 mAdc, IB= 10 mAdc)
Base-Emitter Saturation Voltage -
VBE(sat) - 1.2 Vdc
(IC= 100 mAdc, IB= 10 mAdc)
Current-Gain-Bandwidth Product 100
(IC= 10 mAdc, VCE= 2.0 Vdc, f=100 MHz) fT - - MHz
f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz)
300 80
TJ = 25 C
VCE = 2.0 V 60
200 TJ = 25 C
40
C, CAPACITANCE (pF)
Cibo
100 20
70
10
8.0
50
6.0 Cobo
30 4.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR , REVERSE VOL TAGE (VOLTS)
F IG 1. C urrent-G ain B andwidth P roduc t F IG 2. C apac itanc e
WEITRON
http://www.weitron.com.tw
MPSA05
MPSA06
400 1.0
TJ = 25 C
TJ = 125 C
VCE = 1.0 V 0.8 VBE(sat) @ I C/IB = 10
200
hFE , DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25 C
0.6
VBE(on) @ V CE = 1.0 V
-55 C
100 0.4
80
60 0.2
VCE(sat) @ I C/IB = 10
40 0
0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
F IG 3. DC C urrent G ain F IG 4. " ON" Voltages
1.0 -0.8
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
R VB , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25 C
0.8 -1.2
IC = IC = IC = IC =
50 mA 100 mA 250 mA 500 mA
0.6 -1.6
0.4 -2.0 R VB for VBE
IC =
0.2 10 mA -2.4
0 -2.8
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
F IG 5. C ollec tor S aturation R egion F IG 6. B as e-E mitter Temperature
C oeffic ient
WEITRON
http://www.weitron.com.tw
MPSA05
MPSA05
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
WEITRON
http://www.weitron.com.tw
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