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NPN Plastic-Encapsulate Transistor SOT-89
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 300 Vdc
Collector-Base Voltage VCBO 300 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current-Continuous IC 500 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board PD
(Note 1.)TA=25 C 500 mW
Derate above 25 C 4.0 mW/ C
Thermal Resistance, Junction to Ambient (1) R JA 250 C/W
Junction and Storage, Temperature Range TJ,Tstg -55 to +150 C
Device Marking
MXTA42=A42
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 300 - Vdc
Collector-Base Breakdown Voltage (IC= 100
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