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2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR
GENERAL DESCRIPTION
High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
TO-220F
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 100 V
VCEO Collector-emitter voltage (open base) - 60 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 25 W
VCEsat Collector-emitter saturation voltage IC = 2A; IB = 0.2A - 1.5 V
VBE Emitter forward voltage IE = 2A 1.5 V
tf Fall time IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 100 V
VCEO Collector-emitter voltage (open base) - 60 V
VEBO Emitter-base oltage (open colloctor) 5 V
IC Collector current (DC) - 5 A
IB Base current (DC) - 1 A
Ptot Total power dissipation Tmb 25 - 25 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBO Collector-base cut-off current VCB=100V 0.1 mA
IEBO Emitter-base cut-off current VEB=5V 0.1 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 60 V
VCEsat Collector-emitter saturation voltages IC =2A; IB = 0.2A 1.5 V
hFE DC current gain IC =1A; VCE = 5V 100 200
fT Transition frequency at f = 30MHz IC =0.5A; VCE = 10V 120 MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 80 pF
ton On times IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 us
ts Tum-off storage time IC=2A,IB1=-IB2=0.2A,VCC=30V 1.5 us
tf Fall time IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 us
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]
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