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2sd2253


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 2SD2253                                     Silicon NPN Triple Diffused Power Transistor
GENERAL DESCRIPTION
 HORIZONAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION DISPLAY, COLOR TV
High Speed Switching Applications


 QUICK REFERENCE DATA                                                                         TO-3PM
SYMBOL          PARAMETER                                          CONDITIONS                              TYP   MAX    UNIT
VCB0            Collector-Base voltage                                                                 -   -     1700    V
VCEO            Collector-emitter voltage (open base)                                                       -    600     V
IC              Collector current (DC)                                                                      -     6      A
ICM             Collector current peak value                                                                -    12      A
Ptot            Total power dissipation                            Tmb 25                                   -    50      W
VCEsat          Collector-emitter saturation voltage               IC = 5.0A; IB = 1.0A                     -     5      V

VF              Diode forward voltage                              IF = 6.0A                               1.6   2.0     V
tf              Fall time                                          ICsat = 6.0A; f = 16KHz                 0.3    0.7     s



LIMITING VALUES
 SYMBOL         PARAMETER                                          CONDITIONS                              MIN   MAX    UNIT
 VCB0           Collector-Base voltage                                                                      -    1700    V
 VCEO           Collector-emitter voltage (open base)                                                        -    600    V
 IC             Collector current (DC)                                                                       -     6     A
 ICM            Collector current peak value                                                                 -    12     A
 IB             Base current (DC)                                                                            -     3     A
 IBM            Base current peak value                                                                      -           A
 Ptot           Total power dissipation                            Tmb 25                                    -    50     W
 Tstg           Storage temperature                                                                        -55   150
 Tj             Junction temperature                                                                         -   150



ELECTRICAL CHARACTERISTICS
SYMBOL          PARAMETER                                          CONDITIONS                              TYP   MAX    UNIT
ICE0             Collector cut-off current                          VCB =170 0V;          IE=0
                                                                                             x               -    1.0    mA




VCEsat          Collector-emitter saturation voltages              IC = 5.0A; IB = 1.0A                     -     5      V
VBEsat          Base-emitter satuation voltage                     IC = 5.0A; IB = 1.0A                     -    1.2     V
hFE             DC current gain                                    IC = 1A; VCE = 5V                        8     28
VF              Diode forward voltage                              IF = 6.0A                               1.6   2.0     V
fT              Transition frequency                               IC = 0.1A; VCE = 10V                     1     -     MHz

t
tf              Turn-off storage time Turn-off fall time           IC=6A,IB(end)=1.5A,                     0.3    0.7     s


Wing Shing Computer Components Co., (H.K.)Ltd.        Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com                    E-mail: [email protected]



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