Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors WingShing 2sd717

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.




Image preview - the first page of the document
2sd717


>> Download 2sd717 documenatation <<

Text preview - extract from the document
 2SD717                                                       Silicon Epitaxial Planar Transistor

GENERAL DESCRIPTION
 Silicon NPN high frequency, high power transistors
in
a plastic envelope, primarily for use in audio and
general purpose

                                                                                    TO-3P(I)D
QUICK REFERENCE DATA
 SYMBOL         PARAMETER                                     CONDITIONS                        TYP   MAX    UNIT
 VCBO           Collector-emitter voltage peak value          VBE = 0V                           -     70     V
 VCEO           Collector-emitter voltage (open base)                                            -     70     V
 IC             Collector current (DC)                                                           -     10     A
 ICM            Collector current peak value                                                     -            A
 Ptot           Total power dissipation                       Tmb 25                             -     80     W
 VCEsat         Collector-emitter saturation voltage          IC = 4.0A; IB=0.4A                 -      2     V
 VF             Diode forward voltage                         IF = 3.5A                         1.5   2.0     V
 tf             Fall time                                     IC=4A,IB1=-IB2=0.4A,VCC=30V       0.4   1.0-     s



LIMITING VALUES
 SYMBOL          PARAMETER                                    CONDITIONS                        MIN   MAX    UNIT
 VCESM           Collector-emitter voltage peak value         VBE = 0V                           -     70     V
 VCEO            Collector-emitter voltage (open base)                                           -     70     V
 VEBO            Emitter-base oltage (open colloctor)                                                   5     V
 IC              Collector current (DC)                                                          -     10     A
 IB              Base current (DC)                                                               -     2.5    A
 Ptot            Total power dissipation                      Tmb 25                             -     80     W
 Tstg            Storage temperature                                                            -55   150
 Tj              Junction temperature                                                            -    150



ELECTRICAL CHARACTERISTICS
 SYMBOL         PARAMETER                                     CONDITIONS                        TYP   MAX    UNIT
 ICBO           Collector-base cut-off current                VCB=70V                             -    0.2    mA
 IEBO           Emitter-base cut-off current                  VEB=5V                              -    0.2    mA
 V(BR)CEO       Collector-emitter breakdown voltage           IC=1mA                             70           V
 VCEsat         Collector-emitter saturation voltages         IC = 4.0A; IB = 0.4A                -    3       V
 hFE            DC current gain                               IC = 1A; VCE = 5V                  50   240
 fT             Transition frequency at f = 5MHz              IC = 1A; VCE = 12V                 10    -     MHz
 Cc             Collector capacitance at f = 1MHz             VCB = 10V                         350    -      pF
 ton            On times                                      IC=4A,IB1=-IB2=0.4A,VCC=30V       0.3           us
 ts             Tum-off storage time                          IC=4A,IB1=-IB2=0.4A,VCC=30V       2.5           us
 tf             Fall time                                     IC=4A,IB1=-IB2=0.4A,VCC=30V       0.4           us




Wing Shing Computer Components Co., (H.K.)Ltd.   Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com               E-mail: [email protected]



◦ Jabse Service Manual Search 2024 ◦ Jabse PravopisonTap.bg ◦ Other service manual resources online : FixyaeServiceinfo