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                                                                                                               2SC6076
                          TOSHIBA Transistor      Silicon NPN Epitaxial Type (PCT Process)


                                               2SC6076
Power Amplifier Applications
                                                                                                                      Unit: mm
Power Switching Applications



Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A)
High-speed switching: tstg = 0.4 s (typ.)



Absolute Maximum Ratings (Ta = 25

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