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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
Unit in mm
Specified 12.5V, 28MHz Characteristics
Output Power : Po = 60WPEP (Min.)
Power Gain : Gp = 11.8dB (Min.)
Collector Efficiency : C = 35% (Min.)
Intermodulation Distortion : IMD = -30dB (Max.)
MAXIMUM RATINGS (Tc = 25
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