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                                                                                                                               2SJ669
                  TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)


                                                        2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications                                                                                                                    Unit: mm



  4-V gate drive
  Low drain-source ON-resistance: RDS (ON) = 0.12  (typ.)
  High forward transfer admittance: |Yfs| = 5.0 S (typ.)
  Low leakage current: IDSS = -100 A (max) (VDS = -60 V)
  Enhancement mode: Vth = -0.8 to -2.0 V
                                 (VDS = -10 V, ID = -1 mA)


Absolute Maximum Ratings (Ta = 25

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