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                                                                                                                      2SJ313
                         TOSHIBA Field Effect Transistor Silicon P Channel MOS Type


                                                       2SJ313
Audio Frequency Power Amplifier Application
                                                                                                                          Unit: mm


  High breakdown voltage                      : VDSS = -180 V
  High forward transfer admittance            : |Yfs| = 0.7 S (typ.)
  Complementary to 2SK2013


Maximum Ratings (Ta = 25

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