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                                                                                                           2SJ315
                                                                                        2
              TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV)


                                                   2SJ315
DC-DC Converter
                                                                                                            Unit: mm


FEATURES
  4- Volt gate drive
  Low drain-source ON resistance           : RDS (ON) = 0.25  (typ.)
  High forward transfer admittance         : |Yfs| = 3.0 S (typ.)
  Low leakage current : IDSS = -100 

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