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                                                                                                                           2SK1365
                  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5)


                                                    2SK1365
Switching Power Supply Applications
                                                                                                                                 Unit: mm


  Low drain-source ON resistance                : RDS (ON) = 1.5  (typ.)
  High forward transfer admittance              : |Yfs| = 4.0 S (typ.)
  Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
  Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)




Absolute Maximum Ratings (Ta = 25

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