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                                                                                                                   2SK2013
                         TOSHIBA Field Effect Transistor Silicon N Channel MOS Type


                                                  2SK2013
Audio Frequency Power Amplifier Application
                                                                                                                          Unit: mm


  High breakdown voltage                      : VDSS = 180V
  High forward transfer admittance            : |Yfs| = 0.7 S (typ.)
  Complementary to 2SJ313


Maximum Ratings (Ta = 25

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