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                                                                                                          2SK2605
                  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII)


                                                 2SK2605
Switching Regulator Applications
                                                                                                                 Unit: mm


   Low drain-source ON resistance            : RDS (ON) = 1.9  (typ.)
   High forward transfer admittance          : |Yfs| = 3.8 S (typ.)
   Low leakage current             : IDSS = 100 

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