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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3074
RF POWER MOSFET
FOR VHF-AND UHF-BAND POWER AMPLIFIER
Unit in mm
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These TOSHIBA
products are neither intended nor warranted for any other use.Do not use
these TOSHIBA products listed in this document except for high frequency
Power Amplifier of telecommunications equipment.
Output Power : PO 630mW
Power Gain : GP 14.9dB
Drain Efficiency : D 45%
ABSOLUTE MAXIMUM RATINGS (Ta = 25
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