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                                                                                                            2SK3075
                  TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE


                                             2SK3075
RF POWER MOSFET FOR VHF-AND UHF-BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high                                         Unit: mm
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.



  Output Power                 : PO  7.5W
  Power Gain                   : GP  11.7dB
  Drain Efficiency             : D  50%


ABSOLUTE MAXIMUM RATINGS (Ta = 25

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