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                                                                                                             2SK3799
                  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV)


                                               2SK3799
Switching Regulator Applications
                                                                                                                      Unit: mm


  Low drain-source ON resistance           : RDS (ON) = 1.0  (typ.)
  High forward transfer admittance         : |Yfs| = 6.0 S (typ.)
  Low leakage current : IDSS = 100A (max) (VDS = 720 V)
  Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


Maximum Ratings (Ta = 25

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