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                                                                                                                              2SK3935
                  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)


                                                    2SK3935
Switching Regulator Applications
                                                                                                                                    Unit: mm


  Low drain-source ON resistance                : RDS (ON) = 0.18           (typ.)
  High forward transfer admittance              : |Yfs| = 10 S (typ.)
  Low leakage current : IDSS = 100 A (max) (VDS = 450 V)
  Enhancement model : Vth = 2.0 to 4.0 V
                                 (VDS = 10 V, ID = 1 mA)


Absolute Maximum Ratings (Ta = 25

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