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tk30a06j3a_en_datasheet_090929


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                                                                                                          TK30A06J3A
                   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)


                                               TK30A06J3A
Switching Regulator Applications
                                                                                                                         Unit: mm


   Low drain-source ON-resistance: RDS (ON) = 19 m (typ.)
   High forward transfer admittance: |Yfs| = 34 S (typ.)
   Low leakage current: IDSS = 10 A (max) (VDS = 60 V)
   Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)


Absolute Maximum Ratings (Ta = 25



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