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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8211
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications
Notebook PC Applications
Low drain-source ON resistance: RDS (ON) = 25 m (typ.)
High forward transfer admittance: |Yfs| = 7.0 S (typ.)
Low leakage current: IDSS = 10
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