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                                                                                                            GT15J301
          TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR                            SILICON N CHANNEL IGBT


                                            GT15J301
HIGH POWER SWITCHING APPLICATIONS                                                                                      Unit: mm
MOTOR CONTROL APPLICATIONS

  Third-generation IGBT
  Enhancement mode type
  High speed                    : tf = 0.30s (Max.) (IC = 15A)
  Low saturation voltage        : VCE (sat) = 2.7V (Max.) (IC = 15A)
  FRD included between emitter and collector


ABSOLUTE MAXIMUM RATINGS (Ta = 25

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