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gt10j303_en_wm_20061031


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                                                                                                           GT10J303
           TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR                           SILICON N CHANNEL IGBT


                                           GT10J303
HIGH POWER SWITCHING APPLICATIONS
                                                                                                                   Unit: mm
MOTOR CONTROL APPLICATIONS


  Third-generation IGBT
  Enhancement mode type
  High speed                    : tf = 0.30s (Max.) (IC = 10A)
  Low saturation voltage        : VCE (sat) = 2.7V (Max.) (IC = 10A)
  FRD included between emitter and collector


ABSOLUTE MAXIMUM RATINGS (Ta = 25



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