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                                                                                                            GT30J322
           TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR                              SILICON N CHANNEL IGBT


                                             GT30J322
FOURTH-GENERATION IGBT
                                                                                                                   Unit: mm
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS

   FRD included between emitter and collector
   Enhancement mode type
   High speed                    : tf = 0.25s (Typ.) (IC = 50A)
   Low saturation voltage        : VCE (sat) = 2.1V (Typ.) (IC = 50A)


ABSOLUTE MAXIMUM RATINGS (Ta = 25

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