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                                                                                                           GT50J322
          TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR                              SILICON N CHANNEL IGBT


                                             GT50J322
FOURTH GENERATION IGBT
                                                                                                                   Unit: mm
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS


  FRD included between emitter and collector
  Enhancement mode type
  High speed                     : tf = 0.25s (Typ.) (IC = 50A)
  Low saturation voltage         : VCE (sat) = 2.1V (Typ.) (IC = 50A)


ABSOLUTE MAXIMUM RATINGS (Ta = 25

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