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                                                                                                          GT60M303
          TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR                             SILICON N CHANNEL IGBT


                                          GT60M303
HIGH POWER SWITCHING APPLICATIONS
                                                                                                                   Unit: mm


  Fourth generation IGBT
  FRD included between emitter and collector
  Enhancement mode type
  High speed     IGBT : tf = 0.25s (TYP.)
               FRD : trr = 0.7s (TYP.)
  Low saturation voltage    : VCE (sat) = 2.1V (TYP.)


ABSOLUTE MAXIMUM RATINGS (Ta = 25

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