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hn1b04fe_071101


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                                                                                                            HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)


                                            HN1B04FE
Audio Frequency General Purpose Amplifier Applications                                                              Unit: mm

Q1:
High voltage and high current
            : VCEO = 50V, IC = 150mA (max)
   High hFE : hFE = 120~400
   Excellent hFE linearity
              : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)

Q2:
   High voltage and high current
              : VCEO = -50V, IC = -150mA (max)
   High hFE : hFE = 120~400
   Excellent hFE linearity
              : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.)

Q1 Absolute Maximum Ratings (Ta = 25



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