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                                                                                                         HN1C03FU
                           TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)


                                          HN1C03FU
                                                                                                                 Unit: mm
For Muting and Switching Applications


  Including two devices in US6 (ultra super mini type with 6 leads)
  High emitter-base voltage: VEBO = 25V (min)
  High reverse hFE: reverse hFE = 150 (typ.)(VCE =-2V, IC =-4mA)
  Low on resistance: RON = 1 (typ.)(IB = 5mA)


Absolute Maximum Ratings (Ta = 25

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