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hn1c05fe_071101


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                                                                                                          HN1C05FE
                             TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


                                             HN1C05FE
Low Frequency Amplifier Applications                                                                               Unit: mm

Muting Application
Switching Application


   Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.)
                                :@ IC = 10mA/ IB = 0.5mA
  High Collector Current :IC=400mA(Max.)



Absolute Maximum Ratings (Ta = 25



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