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hn4a08j_071101


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                                                                                                               HN4A08J
                              TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


                                               HN4A08J
Low Frequency Power Amplifer Applications
                                                                                                                       Unit: mm
Power Switching Application
   High DC Current Gain : hFE = 100~320
   Low Saturation Voltage : VCE(sat)= -0.4V (Max.)
           : (IC = -500mA , IB = -20mA)

Absolute Maximum Ratings (Ta = 25



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