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hn4b06j_071101


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                                                                                                           HN4B06J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)


                                               HN4B06J
Audio Frequency General Purpose Amplifier Applications                                                            Unit: mm



Q1:
      High voltage : VCEO = -120V
      High hFE : hFE = 200~700
      Excellent hFE linearity
               : hFE (IC = -0.1mA) / hFE (IC =- 2mA) = 0.95 (typ.)

Q2:
      High voltage : VCEO = 120V
      High hFE : hFE = 200~700
      Excellent hFE linearity
               : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
                                                                                              1.BASE1            (B1)
                                                                                              2.EMITTER          (E)
Q1 Absolute Maximum Ratings (Ta = 25



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