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J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
J308 SST308 U309
J309 SST309 U310
J310 SST310
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J308 -1 to -6.5 -25 8 12
J309 -1 to -4 -25 10 12
J310 -2 to -6.5 -25 8 24
SST308 -1 to -6.5 -25 8 12
SST309 -1 to -4 -25 10 12
SST310 -2 to -6.5 -25 8 24
U309 -1 to -4 -25 10 12
U310 -2.5 to -6 -25 10 24
FEATURES BENEFITS APPLICATIONS
D Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer
Gps 11.5 dB @ 450 MHz D Very High System Sensitivity D Oscillator
D Very Low Noise: 2.7 dB @ 450 MHz D High Quality of Amplification D Sample-and-Hold
D Very Low Distortion D High-Speed Switching Capability D Very Low Capacitance Switches
D High ac/dc Switch Off-Isolation D High Low-Level Signal Amplification
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics. and is available with tape-and-reel options. The U series
Of special interest is its high-frequency performance. Even at 450 hermetically-sealed TO-206AC (TO-52) package supports full
MHz, this series offers high power gain at low noise. military processing. (See Military and Packaging Information for
further details.)
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series For similar dual products packaged in the TO-78, see the
TO-236 (SOT-23) package provides surface-mount capabilities U430/431 data sheet.
TO-226AA TO-206AC
TO-236
(TO-92) (TO-52)
(SOT-23)
D 1 S
D 1
3 G 1
S 2
S 2
G 3 2 3
Top View
SST308 (Z8)* D G and Case
Top View SST309 (Z9)*
J308 SST310 (Z0)*
Top View
J309 U309
J310 *Marking Code for TO-236
U310
For applications information see AN104.
Document Number: 70237 www.vishay.com
S-50149--Rev. H, 24-Jan-05 1
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Gate Current : (J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA Power Dissipation : (J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA (U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Notes
Storage Temperature : (J/SST Prefixes) . . . . . . . . . . . . . . -55 to 150_C a. Derate 2.8 mW/_C above 25_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . -65 to 175_C b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308 J/SST309 J/SST310
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 -25 -25 V
Breakdown Voltage
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA -1 -6.5 -1 -4 -2 -6.5 V
Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 12 60 12 30 24 60 mA
VGS = -15 V, VDS = 0 V -0.002 -1 -1 -1 nA
Gate Reverse Current IGSS
TA = 125_C -0.001 -1 -1 -1 mA
Gate Operating Current IG VDG = 9 V, ID = 10 mA -15 pA
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W
IG = 10 mA
Gate-Source Forward Voltage VGS(F) J 0.7 1 1 1 V
VDS = 0 V
Dynamic
Common-Source
Forward Transconductance
gfs 14 8 10 8 mS
VDS = 10 V, ID = 10 mA
Common-Source f = 1 kHz
gos 110 250 250 250 mS
Output Conductance
Common-Source J 4 5 5 5
Ciiss
Input Capacitance VDS = 10 V SST 4
VGS = -10 V
10 pF
Common Source
Common-Source f = 1 MHz J 1.9 2.5 2.5 2.5
Crss
Reverse Transfer C
Capacitance SST 1.9
Equivalent Input VDS = 10 V, ID = 10 mA nV/
en 6
Noise Voltage f = 100 Hz Hz
High Frequency
Common-Gate f = 105 MHz 14
gf
fg
Forward Transconductance f = 450 MHz 13
mS
Common-Gate f = 105 MHz 0.16
gog
Output Conductance f = 450 MHz 0.55
VDS = 10 V
ID = 10 mA f = 105 MHz 16
Common Gate Power Gainc
Common-Gate Gpg
f = 450 MHz 11.5
dB
f = 105 MHz 1.5
Noise Figure NF
f = 450 MHz 2.7
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
www.vishay.com Document Number: 70237
2 S-50149--Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309 U310
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 -25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA -1 -4 -2.5 -6 V
Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 12 30 24 60 mA
VGS = -15 V, VDS = 0 V -0.002 -0.15 -0.15 nA
Gate Reverse Current IGSS
TA = 125_C -0.001 -0.15 -0.15 mA
Gate Operating Current IG VDG = 9 V, ID = 10 mA -15 pA
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W
Gate-Source Forward Voltage VGS(F) IG = 10 mA , VDS = 0 V 0.7 1 1 V
Dynamic
Common-Source
gfs 14 10 10 mS
Forward Transconductance
VDS = 10 V, ID = 10 mA
Common-Source f = 1 kHz
gos 110 250 250 mS
Output Conductance
Common-Source
Ciss 4 5 5
Input Capacitance
VDS = 10 V, VGS = -10 V
pF
Common-Source f = 1 MHz
Crss 1.9 2.5 2.5
Reverse Transfer Capacitance
VDS = 10 V, ID = 10 mA nV/
Equivalent Input Noise Voltage en 6
f = 100 Hz Hz
High Frequency
f = 105 MHz 14
Common-Gate
gf
fg
Forward Transconductance f = 450 MHz 13
mS
f = 105 MHz 0.16
Common-Gate
gog
Output Conductance f = 450 MHz 0.55
VDS = 10 V
ID = 10 mA f = 105 MHz 16 14 14
Common Gate Power Gainc, d
Common-Gate Gpg
f = 450 MHz 11.5 10 10
dB
f = 105 MHz 1.5 2 2
Noise Figured NF
f = 450 MHz 2.7 3.5 3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
d. Not a production test.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70237 www.vishay.com
S-50149--Rev. H, 24-Jan-05 3
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
100 50 10 nA
IDSS @ VDS = 10 V, VGS = 0 V IG @ ID = 10 mA
gfs @ VDS = 10 V, VGS = 0 V 200 mA
gfs - Forward Transconductance (mS)
f = 1 kHz TA = 125_C
1 nA
IDSS - Saturation Drain Current (mA)
80 40
IG - Gate Leakage
60 30 100 pA IGSS @ 125_C
200 mA
gfs
40 IDSS 20 10 pA
10 mA
TA = 25_C
20 10 1 pA IGSS @ 25_C
0 0 0.1 pA
0 -1 -2 -3 -4 -5 0 3 6 9 12 15
VGS(off) - Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)
On-Resistance and Output Conductance Common-Source Forward Transconductance
vs. Gate-Source Cutoff Voltage vs. Drain Current
100 300 20
VGS(off) = -3 V VDS = 10 V
rDS(on) - Drain-Source On-Resistance ( )
f = 1 kHz
gos - Output Conductance (mS)
80 240 16
gfs - Forward Transconductance (mS)
TA = -55_C
60 180 12
rDS
gos
40 120 8 25_C
125_C
20 60 4
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
0 0 0
0 -1 -2 -3 -4 -5 0.1 1 10
VGS(off) - Gate-Source Cutoff Voltage (V) ID - Drain Current (mA)
Output Characteristics Output Characteristics
15 30
VGS(off) = -3 V
VGS(off) = -1.5 V
VGS = 0 V
VGS = 0 V
12 24
ID - Drain Current (mA)
ID - Drain Current (mA)
-0.2 V
-0.4 V
9 18
-0.8 V
-0.4 V
-1.2 V
6 12
-0.6 V
-1.6 V
3 -0.8 V 6 -2.0 V
-2.4 V
-1.0 V
0 0
0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1
VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
www.vishay.com Document Number: 70237
4 S-50149--Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics Output Characteristics
20 50
VGS(off) = -1.5 V VGS(off) = -3 V
VGS = 0 V
VGS = 0 V
16 40
-0.2 V
-0.4 V
ID - Drain Current (mA)
ID - Drain Current (mA)
12 30
-0.4 V -0.8 V
8 20 -1.2 V
-0.6 V
-1.6 V
-0.8 V
4 10
-2.0 V
-1.0 V
-2.4 V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
Transfer Characteristics Transfer Characteristics
30 100
VGS(off) = -1.5 V VDS = 10 V VGS(off) = -3 V VDS = 10 V
24 80
ID - Drain Current (mA)
ID - Drain Current (mA)
18 TA = -55_C 60 TA = -55_C
25_C
25_C
12 40
6 125_C 20 125_C
0 0
0 -0.4 -0.8 -1.2 -1.6 -2 0 -0.6 -1.2 -1.8 -2.4 -3
VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage
30 50
VGS(off) = -1.5 V VDS = 10 V VGS(off) = -3 V VDS = 10 V
f = 1 kHz f = 1 kHz
gfs - Forward Transconductance (mS)
gfs - Forward Transconductance (mS)
24 40
TA = -55_C
25_C TA = -55_C
18 30
125_C 25_C
12 20
125_C
6 10
0 0
0 -0.4 -0.8 -1.2 -1.6 -2 0 -0.6 -1.2 -1.8 -2.4 -3
VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
Document Number: 70237 www.vishay.com
S-50149--Rev. H, 24-Jan-05 5
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
100 100
g fs R L
rDS(on) - Drain-Source On-Resistance ( )
AV + 1 ) R g
L os
80 80
Assume VDD = 15 V, VDS = 5 V
VGS(off) = -1.5 V 10 V
AV - Voltage Gain
RL +
60 60 ID
VGS(off) = -1.5 V
40 40
VGS(off) = -3 V
20 20
VGS(off) = -3 V
0 0
1 10 100 0.1 1 10
ID - Drain Current (mA) ID - Drain Current (mA)
Common-Source Input Capacitance Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage vs. Gate-Source Voltage
15 10
f = 1 MHz
Crss - Reverse Feedback Capacitance (pF) f = 1 MHz
12 8
Ciss - Input Capacitance (pF)
VDS = 0 V
9 6
VDS = 0 V
6 4
3 VDS = 5 V 2
VDS = 5 V
0 0
0 -4 -8 -12 -16 -20 0 -4 -8 -12 -16 -20
VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
Input Admittance vs. Frequency Forward Admittance vs. Frequency
100 100
gig -gfg
10 10
(mS)
(mS)
big
bfg
1 1
TA = 25_C TA = 25_C
VDG = 10 V VDG = 10 V
ID = 10 mA ID = 10 mA
Common-Gate Common-Gate
0.1 0.1
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) f - Frequency (MHz)
www.vishay.com Document Number: 70237
6 S-50149--Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance vs. Frequency Output Admittance vs. Frequency
10 100
TA = 25_C TA = 25_C
VDG = 10 V VDG = 10 V
ID = 10 mA ID = 10 mA
Common-Gate Common-Gate
1 10
bog
-brg
(mS)
(mS)
+grg
0.1 -grg 1 gog
0.01 0.1
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) f - Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20 150
VDS = 10 V VGS(off) = -3 V VDS = 10 V
f = 1 kHz
16 120
Hz
gos - Output Conductance (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo