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Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel VDS (V) rDS(on) (W) ID (mA)
2.0 @ VGS = 4.5 V 250
N-Channel 20
2.5 @ VGS = 2.5 V 150
3.8 @ VGS = -4.5 V -180
P-Channel
P Channel -20
20
5.0 @ VGS = -2.5 V -100
SOT-363
SC-70 (6-Leads)
Marking Code
S1 1 6 D1
RE XX
YY
G1 2 5 G2 Lot Traceability
and Date Code
D2 3 4 S2 Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20
V
Gate-Source Voltage VGS "8 "8
TA = 25_C 250 -180
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 200 -140 mA
Pulsed Drain Current IDM 500 -500
TA = 25_C 0.20
Maximum Power Dissipationa PD W
TA = 70_C 0.13
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 625 (Total) _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 71303 www.vishay.com S
S-03840--Rev. B, 21-May-01 1
Si1501DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VGS = 0 V, ID = 10 mA N-Ch 20 24
Drain-Source
Drain Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = -10 mA P-Ch -20 -24
V
VDS = VGS, ID = 50 mA N-Ch 0.4 0.9 1.5
Gate Threshold Voltage VGS( h)
GS(th)
VDS = VGS, ID = -50 mA P-Ch -0.4 -0.9 -1.5
N-Ch "2 "100
Gate-Body
Gate Body Leakage IGSS VDS = 0 V, VGS = "8 V
V
P-Ch "2 "100
nA
VDS = 20 V, VGS = 0 V N-Ch 0.001 100
VDS = -20 V, VGS = 0 V P-Ch -0.001 -100
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V, TJ = 55_C N-Ch 1
mA
VDS = -20 V, VGS = 0 V, TJ = 55_C P-Ch -1
VDS w 2.5 V, VGS = 5.0 V N-Ch 120
VDS v -2.5 V, VGS = -5.0 V P-Ch -120
On State Drain Currenta
On-State ID( )
D(on) mA
VDS w 4.5 V, VGS = 8.0 V N-Ch 400
VDS v -4.5 V, VGS = -8.0 V P-Ch -400
VGS = 2.5 V, ID = 150 mA N-Ch 1.6 2.5
VGS = -2.5 V, ID = -75 mA P-Ch 4 5
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 250 mA N-Ch 1.2 2.0
VGS = -4.5 V, ID = -180 mA P-Ch 2.6 3.8
VDS = 2.5 V, ID = 50 mA N-Ch 150
Forward Transconductancea gf
fs mS
VDS = -2.5 V, ID = - 50 mA P-Ch 200
IS = 50 mA, VGS = 0 V N-Ch 0.7 1.2
Diode Forward Voltagea VSD V
IS = -50 mA, VGS = 0 V P-Ch -0.7 -1.2
Dynamicb
N-Ch 300 450
Total Gate Charge Qg
N-Channel P-Ch 300 450
VDS = 5 V, VGS = 4.5 V, ID = 100 mA N-Ch 25
Gate-Source
Gate Source Charge Qgs pC
P Channel
P-Channel P-Ch 25
VDS = -5 V, VGS = -4.5 V ID = -100 mA
V V, 100 A N-Ch 100
Gate-Drain
Gate Drain Charge Qgd
d
P-Ch 100
N-Ch 15
Input Capacitance Ciiss
N-Channel P-Ch 15
VDS = 5 V, VGS = 0 V N-Ch 11
Output Capacitance Coss pF
P Channel
P-Channel P-Ch 11
VDS = -5 V VGS = 0 V
V, N-Ch 5
Reverse Transfer Capacitance Crss
P-Ch 5
Switching
N-Ch 7 12
Turn-On
Turn On Time td( )
d(on)
P-Ch 7 12
N-Channel
N Channel
VDD = 3 V, RL = 100 W N-Ch 25 35
Rise Time tr
ID = 0.25 A, VGEN = 4.5 V, Rg = 10 W P-Ch 25 35
ns
P Channel
P-Channel N-Ch 19 30
Turn-Off
Turn Off Delay Time td( ff)
d(off) VDD = -3 V RL = 100 W
3 V, P-Ch 19 30
ID = -0.25 A, VGEN = -4.5 V, Rg = 10 W
N-Ch 9 15
Fall Time tf
P-Ch 9 15
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com Document Number: 71303
2 S-03840--Rev. B, 21-May-01
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
1.25 0.8
VGS = 3.5 thru 5 V
TC = -55_C
1.00
0.6 25_C
I D - Drain Current (A)
I D - Drain Current (A)
3V
0.75
2.5 V 0.4
125_C
0.50
2V
0.2
0.25
1.5 V
1V
0.00 0.0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
7 50
6
40
r DS(on) - On-Resistance ( W )
C - Capacitance (pF)
5
30
4
3 Ciss
20
VGS = 2.5 V
2 Coss
10
1 VGS = 4.5 V Crss
0 0
0 1 2 3 4 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 6 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
8 ID = 100 mA 1.4 ID = 100 m A
r DS(on) - On-Resistance (W)
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C)
Document Number: 71303 www.vishay.com S
S-03840--Rev. B, 21-May-01 3
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
3 8
1 TJ = 125_C
r DS(on) - On-Resistance ( W )
6
I S - Source Current (A)
0.1
ID = 250 mA
TJ = 25_C 4
0.01
2
TJ = -55_C
0.001 0
0.00 0.3 0.6 0.9 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2
ID = 50 mA
0.1
V GS(th) Variance (V)
-0.0
-0.1
-0.2
-0.3
-0.4
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
www.vishay.com Document Number: 71303
4 S-03840--Rev. B, 21-May-01
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
1.2 0.5
5V TC = -55_C
1.0
0.4
4.5 V
0.8 25_C
I D - Drain Current (A)
I D - Drain Current (A)
4V
0.3
0.6 3.5 V
125_C
0.2
0.4 3V
2.5 V 0.1
0.2
2V
0.0 0.0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
8 45
36
r DS(on) - On-Resistance ( W )
6
C - Capacitance (pF)
27
VGS = 2.5 V
4 Ciss
VGS = 4.5 V 18
Coss
2
9
Crss
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 6 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
8 ID = 80 mA 1.4 ID = 180 m A
r DS(on) - On-Resistance (W)
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C)
Document Number: 71303 www.vishay.com S
S-03840--Rev. B, 21-May-01 5
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1 6
TJ = 150_C 5
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.1 4
ID = 180 mA
3
TJ = 25_C
0.01 2
1
0.001 0
0.00 0.5 01 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.3
ID = 50 mA
0.2
V GS(th) Variance (V)
0.1
0.0
-0.1
-0.2
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
www.vishay.com Document Number: 71303
6 S-03840--Rev. B, 21-May-01
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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