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Si4837DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET
D LITTLE FOOTr Plus Schottky
0.020 @ VGS = - 10 V 8.3
- 30 D 100% Rg Tested
0.030 @ VGS = - 4.5 V 6.8
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY D Battery Charging
D DC/DC Converters
Vf (V)
VKA (V) IF (A) - Asynchronous Buck
Diode Forward Voltage
- Voltage Inverter
30 0.53 V @ 3 A 3
S K
SO-8
K 1 8 A
G
S 2 7 D
S 3 6 D
G 4 5 D
Top View
D A
Ordering Information: Si4837DY
Si4837DY-T1 (with Tape and Reel) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 Sec Steady State Unit
Drain-Source Voltage (MOSFET) VDS - 30
Reverse Voltage (Schottky) VKA 30 V
Gate-Source Voltage (MOSFET) VGS "20
TA = 25_C - 8.3 - 6.1
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b ID
TA = 70_C - 6.6 - 4.9
Pulsed Drain Current (MOSFET) IDM - 40
A
Continuous Source Current (MOSFET Diode Conduction)a, b IS - 2.3 - 1.25
Average Foward Current (Schottky) IF 3
Pulsed Foward Current (Schottky) IFM 20
TA = 25_C 2.5 1.38
Maximum Power Dissipation (MOSFET)a, b
TA = 70_C 1.6 0.88
PD W
TA = 25_C 1.5 1.0
Maximum Power Dissipation (Schottky)a, b
TA = 70_C 0.98 0.64
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 71662 www.vishay.com
S-31726--Rev. B, 18-Aug-03 1
Si4837DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 37 50
Junction-to-Ambient (t v 10 sec)a
Maximum J
M i ti t A bi t )
Schottky 65 81
RthJA
MOSFET 70 90
Maximum Junction-to-Ambient (t = steady state)a
M i J ti t A bi t t d t t ) _C/W
Schottky 100 125
MOSFET 20 25
Maximum Junction to Foot (Drain)
Junction-to-Foot RthJF
Schottky 50 62.5
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = - 24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 24 V, VGS = 0 V, TJ = 75_C - 10
On-State Drain Currenta ID(on) VDS w - 5 V, VGS = - 10 V - 20 A
VGS = - 10 V, ID = - 8.3 A 0.0165 0.020
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = - 4.5 V, ID = - 6.8 A 0.0245 0.030
Forward Transconductancea gfs VDS = - 15 V, ID = - 8.3 A 22 S
Diode Forward Voltagea VSD IS = - 2.3 A, VGS = 0 V - 0.75 - 1.1 V
Dynamicb
Total Gate Charge Qg 22 33
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 8.3 A
, , 9 nC
Gate-Drain Charge Qgd 6.6
Gate-Resistance Rg 1 1.9 2 W
Turn-On Delay Time td(on) 17 26
Rise Time tr VDD = - 15 V, RL = 15 W 15 23
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 56 85 ns
Fall Time tf 21 32
Source-Drain Reverse Recovery Time trr IF = - 2.3 A, di/dt = 100 A/ms 45 70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 3 A 0.485 0.53
Forward Voltage Drop VF V
IF = 3 A, TJ = 125_C 0.42 0.47
Vr = 30 V 0.008 0.1
Maximum Reverse Leakage Current
g Irm Vr = 30 V, TJ = 75_C 0.4 5 mA
Vr = 30 V, TJ = 125_C 6.5 20
Junction Capacitance CT Vr = 15 V 102 pF
www.vishay.com Document Number: 71662
2 S-31726--Rev. B, 18-Aug-03
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V
40 40
I D - Drain Current (A)
I D - Drain Current (A)
30 4V 30
20 20
TC = 125_C
10 10
3V
25_C
- 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 3500
Ciss
r DS(on)- On-Resistance ( W )
0.04 2800
C - Capacitance (pF)
0.03 2100
VGS = 4.5 V
VGS = 10 V 1400
0.02
Coss
0.01 700
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.8
VDS = 15 V VGS = 10 V
ID = 8.3 A ID = 8.3 A
V GS - Gate-to-Source Voltage (V)
1.6
8
r DS(on)- On-Resistance ( W )
1.4
6
(Normalized)
1.2
4
1.0
2
0.8
0 0.6
0 8 16 24 32 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71662 www.vishay.com
S-31726--Rev. B, 18-Aug-03 3
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.070
r DS(on)- On-Resistance ( W )
0.056
I S - Source Current (A)
TJ = 150_C
10 0.042
0.028 ID = 8.3 A
TJ = 25_C
0.014
1 0.000
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 200
0.6 160
VGS(th) Variance (V)
ID = 250 mA
0.4
120
Power (W)
0.2
80
0.0
40
- 0.2
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
PDM
0.1
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71662
4 S-31726--Rev. B, 18-Aug-03
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
100 5
10
I R - Reverse Current (mA)
1
I F - Forward Current (A)
TJ = 150_C
1
0.1
30 V
20 V
TJ = 25_C
0.01
0.001
0.0001 0.1
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8
TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V)
Capacitance
500
400
CT - Junction Capacitance (pF)
300
200
100
0
0 6 12 18 24 30
VKA - Reverse Voltage (V
Document Number: 71662 www.vishay.com
S-31726--Rev. B, 18-Aug-03 5
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
PDM
0.1
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71662
6 S-31726--Rev. B, 18-Aug-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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