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2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484 SST5484
2N5485 SST5485
2N5486 SST5486
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N/SST5484 -0.3 to -3 -25 3 1
2N/SST5485 -0.5 to -4 -25 3.5 4
2N/SST5486 -2 to -6 -25 4 8
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer
Gps 13 dB (typ) @ 400 MHz - 5485/6 D Very High System Sensitivity D Oscillator
D Very Low Noise: 2.5 dB (typ) @ D High Quality of Amplification D Sample-and-Hold
400 MHz - 5485/6 D High-Speed Switching Capability D Very Low Capacitance Switches
D Very Low Distortion D High Low-Level Signal Amplification
D High AC/DC Switch Off-Isolation
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs The 2N series, TO-226AA (TO-92), and SST series, TO-236
designed to provide high-performance amplification, (SOT-23), packages provide low-cost options and are
especially at high frequencies up to and beyond 400 MHz. available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-226AA TO-236
(TO-92) (SOT-23
)
D 1 D 1
3 G
S 2 S 2
G 3
Top View
SST5484 (H4)*
Top View SST5485 (H5)*
2N5484 SST5486 (H6)*
2N5485
2N5486 *Marking Code for TO-236
For applications information see AN102 and AN105.
Document Number: 70246 www.vishay.com
S-50148--Rev. G, 24-Jan-05 1
2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 -25 -25
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA -0.3 -3 -0.5 -4 -2 -6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = -20 V, VDS = 0 V -0.002 -1 -1 -1
Gate Reverse Current IGSS nA
TA = 100_C -0.2 -200 -200 -200
Gate Operating Currentc IG VDG = 10 V, ID = 1 mA -20 pA
Gate-Source
VGS(F) IG = 10 mA , VDS = 0 V 0.8 V
Forward Voltagec
Dynamic
Common-Source
gfs 3 6 3.5 7 4 8 mS
Forward TransconductanceNO TAG VDS = 15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 50 60 75 mS
Output ConductanceNO TAG
Common-Source
Ciss 2.2 5 5 5
Input Capacitance
Common-Source VDS = 15 V, VGS = 0 V
Crss 0.7 1 1 1 pF
Reverse Transfer Capacitance f = 1 MHz
Common-Source
Coss 1 2 2 2
Output Capacitance
Equivalent Input VDS = 15 V, VGS = 0 V nV/
en 10
Noise Voltagec f = 100 Hz Hz
High-Frequency
Common-Source f = 100 MHz 5.5 2.5
Yf (RE)
fs(RE) mS
Transconductanced f = 400 MHz 5.5 3 3.5
Common-Source VDS = 15 V f = 100 MHz 45 75
Yos(RE)
(RE) mS
Output Conductanced VGS = 0 V f = 400 MHz 65 100 100
Common-Source f = 100 MHz 0.05 0.1
Yiis(RE)
(RE) mS
Input Conductanced f = 400 MHz 0.8 1 1
VDS = 15 V, ID = 1 mA
20 16 25
f = 100 MHz
Common-Source Power
C S P Gaind
G i Gps f = 100 MHz 21 18 30 18 30
VDS = 15 V
ID = 4 mA f = 400 MHz 13 10 20 10 20
VDS = 15 V, VGS = 0 V
0.3 2.5 2.5 2.5 dB
RG = 1 MW , f = 1 kHz
VDS = 15 V, ID = 1 mA
2 3
Noise Figured
g NF RG = 1 kW , f = 100 MHz
VDS = 15 V f = 100 MHz 1 2 2
ID = 4 mA
RG = 1 kW f = 400 MHz 2.5 4 4
www.vishay.com Document Number: 70246
2 S-50148--Rev. G, 24-Jan-05
2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486
Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 -25 -25
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA -0.3 -3 -0.5 -4 -2 -6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = -20 V, VDS = 0 V -0.002 -1 -1 -1
Gate Reverse Current IGSS nA
TA = 100_C -0.2 -200 -200 -200
Gate Operating Currentc IG VDG = 10 V, ID = 1 mA -20 pA
Gate-Source
VGS(F) IG = 10 mA , VDS = 0 V 0.8 V
Forward Voltagec
Dynamic
Common-Source
gfs 3 6 3.5 7 4 8 mS
Forward TransconductanceNO TAG VDS = 15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 50 60 75 mS
Output ConductanceNO TAG
Common-Source
Ciss 2.2
Input Capacitance
Common-Source
Reverse Transfer Crss VDS = 15 V, VGS = 0 V 0.7 pF
Capacitance f = 1 MHz
Common-Source
Coss 1
Output Capacitance
Equivalent Input VDS = 15 V, VGS = 0 V nV/
en 10
Noise Voltagec f = 100 Hz Hz
High-Frequency
Common-Source f = 100 MHz 5.5
Yf
fs mS
Transconductance f = 400 MHz 5.5
Common-Source VDS = 15 V f = 100 MHz 45
Yos mS
Output Conductance VGS = 0 V f = 400 MHz 65
Common-Source f = 100 MHz 0.05
Yiis mS
Input Conductance f = 400 MHz 0.8
VDS = 15 V, ID = 1 mA 20
f = 100 MHz
Common-Source
Gps f = 100 MHz 21
Power Gain VDS = 15 V
ID = 4 mA f = 400 MHz 13
VDS = 15 V, VGS = 0 V
0.3 dB
RG = 1 MW , f = 1 kHz
VDS = 15 V, ID = 1 mA
2
Noise Figure
g NF RG = 1 kW , f = 100 MHz
VDS = 15 V f = 100 MHz 1
ID = 4 mA
RG = 1 kW f = 400 MHz 2.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70246 www.vishay.com
S-50148--Rev. G, 24-Jan-05 3
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
20 10 500 100
rDS @ ID = 300 mA, VGS = 0 V
rDS(on) - Drain-Source On-Resistance ( )
gfs - Forward Transconductance (mS)
gos @ VDS = 10 V, VGS = 0 V
IDSS - Saturation Drain Current (mA)
IDSS
gos - Output Conductance (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo