Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various AOD412

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 AOD412
 N-Channel Enhancement Mode Field Effect Transistor

 General Description                                               Features

 The AOD412 uses advanced trench technology to                     VDS (V) = 30V
 provide excellent RDS(ON), low gate chargeand low                 ID = 85A (VGS = 10V)
 gate resistance. This device is ideally suited for use            RDS(ON) < 7.0m (VGS = 10V)
 as a high side switch in CPU core power conversion.               RDS(ON) < 10.5m (VGS = 4.5V)
 Standard Product AOD412 is Pb-free (meets ROHS
 & Sony 259 specifications). AOD412L is a Green
 Product ordering option. AOD412 and AOD412L are
 electrically identical.

            TO-252
            D-PAK
                                                                     D

                          Top View
                          Drain Connected
                          to Tab
                                                             G
                                                                     S

        G    D       S


Absolute Maximum Ratings TA=25

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